All MOSFET. PMZ350XN Datasheet

 

PMZ350XN Datasheet and Replacement


   Type Designator: PMZ350XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1.87 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: SOT883
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PMZ350XN Datasheet (PDF)

 8.1. Size:203K  nxp
pmz350upe.pdf pdf_icon

PMZ350XN

PMZ350UPE20 V, P-channel Trench MOSFET14 May 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect

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History: WMN05N80M3 | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL

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