PMZ350XN Specs and Replacement

Type Designator: PMZ350XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.87 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: SOT883

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PMZ350XN datasheet

 8.1. Size:203K  nxp
 pmz350upe.pdf pdf_icon

PMZ350XN

PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect... See More ⇒

Detailed specifications: PMV45EN, PMV48XP, PMV56XN, PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN, PMZ270XN, 10N65, PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K, PSMN005-75B, PSMN006-20K, PSMN008-75B, PSMN009-100B

Keywords - PMZ350XN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.