All MOSFET. PMZ350XN Datasheet

 

PMZ350XN Datasheet and Replacement


   Type Designator: PMZ350XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: SOT883
 

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PMZ350XN Datasheet (PDF)

 8.1. Size:203K  nxp
 pmz350upe.pdf pdf_icon

PMZ350XN

PMZ350UPE20 V, P-channel Trench MOSFET14 May 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect

Datasheet: PMV45EN , PMV48XP , PMV56XN , PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , 75N75 , PMZ390UN , PMZ760SN , PSMN004-60B , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B .

History: CEU83A3 | NTH4L020N120SC1

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