STB100NF04 Datasheet and Replacement
Type Designator: STB100NF04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: D2PAK
STB100NF04 substitution
STB100NF04 Datasheet (PDF)
stb100nf04 stp100nf04.pdf
STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V
stb100nf04.pdf
STB100NF04www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please see DTO-263GSSSDDG
stb100nf04t4.pdf
STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V
stb100nf04l.pdf
STB100NF04LN-CHANNEL 40V - 0.0036 - 100A D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF04L 40 V
Datasheet: PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC , SI2302DS , SI2304DS , IRF630FP , IRF630M , STB100NF03L-03 , 7N65 , STB10NK60Z , STB11N52K3 , STB11NK40Z , STB11NK50Z , STB11NM60 , STB11NM60FD , STB11NM80 , STB120N4F6 .
Keywords - STB100NF04 MOSFET datasheet
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