STB16N65M5 Specs and Replacement
Type Designator: STB16N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
Package: D2PAK
STB16N65M5 substitution
- MOSFET ⓘ Cross-Reference Search
STB16N65M5 datasheet
stb16n65m5 std16n65m5.pdf
STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in D PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V ... See More ⇒
stb16nk65z-s stp16nk65z.pdf
STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP16NK65Z 650 V ... See More ⇒
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf
STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB16NM50N 550 V 0.26 15 A D PAK I PAK STI16NM50N 550 V 0.26 15 A 3 STF16NM50N 550 V 0.26 15 A (1) 2 1 STP16NM50N 550 V 0.26 15 A TO-247 STW16NM50N 550... See More ⇒
stb16ns25.pdf
STB16NS25 N-CHANNEL 250V - 0.23 - 16AD2PAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STB16NS25 250 V ... See More ⇒
Detailed specifications: STB14NM50N, STB150NF04, STB150NF55, STB155N3H6, STB155N3LH6, STB15NM60ND, STB160N75F3, STB160NF3LL, BS170, STB16NF06L, STB170NF04, STB180N55F3, STB185N55F3, STB18N55M5, STB18NF25, STB18NM60N, STB18NM80
Keywords - STB16N65M5 MOSFET specs
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