All MOSFET. STB170NF04 Datasheet

 

STB170NF04 Datasheet and Replacement


   Type Designator: STB170NF04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: D2PAK
 

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STB170NF04 Datasheet (PDF)

 ..1. Size:384K  st
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STB170NF04

STB170NF04N-channel 40 V, 4.4 m, 80 A, D2PAKSTripFET II Power MOSFETFeatures VDSS RDS(on) ID PTOTTypeSTB170NF04 40 V

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STB170NF04

STB17N80K5 N-channel 800 V, 0.29 typ., 14 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTB17N80K5 800 V 0.34 14 A 2 Industrys lowest RDS(on) x area 3 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested DPAK Zener-protected

Datasheet: STB150NF55 , STB155N3H6 , STB155N3LH6 , STB15NM60ND , STB160N75F3 , STB160NF3LL , STB16N65M5 , STB16NF06L , IRFP250 , STB180N55F3 , STB185N55F3 , STB18N55M5 , STB18NF25 , STB18NM60N , STB18NM80 , STB190NF04 , STB19NF20 .

History: STB155N3H6 | STB18NM60N | SQD100N03-3M4 | OSG65R099FF | STP16N65M2 | TPC8407 | STP16NS25FP

Keywords - STB170NF04 MOSFET datasheet

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