STB26NM60N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB26NM60N
Marking Code: 26NM60N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165
Ohm
Package:
D2PAK
STB26NM60N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB26NM60N
Datasheet (PDF)
..1. Size:1039K st
stb26nm60n stp26nm60n.pdf
STB26NM60N, STP26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in DPAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) DTABSTB26NM60N TAB600 V 0.165 20 A STP26NM60N 100% avalanche tested 3 Low input capacitance and gate charge D2PAK TO-220 21 Low gate input resistance Application
..2. Size:1134K st
stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf
STB26NM60N, STF26NM60NSTP26NM60N, STW26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) Type VDSS IDmax32312STB26NM60N 600 V
0.1. Size:1344K st
stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ Tjmax RDS(on) max ID31STB26NM60ND23D PAK21 STF26NM60ND650 V 0.175 21 ATO-220FPSTP26NM60NDTABSTW26NM60ND 100% avalanche tested3 32
Datasheet: STB22NS25Z
, STB230NH03L
, STB23NM50N
, STB23NM60ND
, STB24NM60N
, STB24NM65N
, STB25NM50N
, STB25NM60ND
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, STB28NM50N
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.