STB270N4F3 Datasheet and Replacement
Type Designator: STB270N4F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: D2PAK
STB270N4F3 substitution
STB270N4F3 Datasheet (PDF)
stb270n4f3 sti270n4f3.pdf

STB270N4F3STI270N4F3N-channel 40 V, 1.6 m, 160 A, D2PAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB270N4F3 40 V
stb270n04-1 stb270n04 stp270n04.pdf

STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V
stb27nm60nd stw27nm60nd.pdf

STB27NM60ND, STW27NM60NDAutomotive-grade N-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeatures Order codes VDS@ Tjmax RDS(on) max IDSTB27NM60NDTAB650 V 0.16 21 ASTW27NM60ND Designed for automotive applications and 3 321AEC-Q101 qualified1D2PAK The worldwide best RDS
stb27nm60nd.pdf

STB27NM60NDSTW27NM60NDN-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFET(with fast diode) in D2PAK, TO-247FeaturesVDSS @Type RDS(on) max IDTJMAXTABSTB27NM60ND 21 A650 V 0.16 STW27NM60ND 21 A3 3 The worldwide best RDS(on)*area amongst the 211fast recovery diode devicesD2PAKTO-247 100% avalanche tested Low input capacitance and gate charge
Datasheet: STB230NH03L , STB23NM50N , STB23NM60ND , STB24NM60N , STB24NM65N , STB25NM50N , STB25NM60ND , STB26NM60N , 8N60 , STB28NM50N , STB300NH02L , STB30N65M5 , STB30NF10 , STB30NF20 , STB30NM50N , STB30NM60ND , STB32N65M5 .
Keywords - STB270N4F3 MOSFET datasheet
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