STB30N65M5 Datasheet and Replacement
Type Designator: STB30N65M5
Marking Code: 30N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 64
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 68
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.139
Ohm
Package:
D2PAK
- MOSFET Cross-Reference Search
STB30N65M5 Datasheet (PDF)
..1. Size:1205K st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf 
STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V
8.1. Size:359K st
stb30ns15.pdf 
STB30NS15N-CHANNEL 150V - 0.075 - 30A D2PAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB30NS15 150 V
8.2. Size:455K st
stb30nf10.pdf 
STB30NF10STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB30NF10 100 V
8.3. Size:502K st
stb30nf10 stp30nf10 stp30nf10fp.pdf 
STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
8.4. Size:770K st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf 
STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
8.5. Size:386K st
stp30nf20 stb30nf20 stw30nf20.pdf 
STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me
8.6. Size:847K st
stb30nf20l.pdf 
STB30NF20LN-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) ID PTOTSTB30NF20L 200 V 0.075 30 A 150 WTAB Gate charge minimized 100% avalanche tested3 Excellent figure of merit (RDS* Qg)1 Very good manufacturing repeatabilityDPAK Very low intrinsic capacitanceApp
8.7. Size:502K st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf 
STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
8.9. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf 
STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
8.10. Size:43K st
stb30n10-.pdf 
STB30N10N - CHANNEL 100V - 0.06 - 30A - D2PAK POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTB30N10 100 V
8.11. Size:792K st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf 
STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T
8.12. Size:393K st
stp30nf20 stw30nf20 stb30nf20.pdf 
STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me
8.13. Size:355K inchange semiconductor
stb30nf20.pdf 
isc N-Channel MOSFET Transistor STB30NF20FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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History: SM6A12NSFP
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Keywords - STB30N65M5 MOSFET datasheet
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STB30N65M5 equivalent finder
STB30N65M5 lookup
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STB30N65M5 replacement