STB36NF06L Datasheet and Replacement
Type Designator: STB36NF06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: D2PAK
STB36NF06L substitution
STB36NF06L Datasheet (PDF)
stp36nf06l stb36nf06l.pdf

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V
stb36nf06lt4.pdf

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V
stb36nm60nd stw36nm60nd.pdf

STB36NM60ND, STW36NM60NDAutomotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeaturesVDSS @TJ RDS(on) Order codes IDmax. max.TABSTB36NM60ND650 V 0.110 29 ASTW36NM60ND3 Designed for automotive applications and 1 32 AEC-Q101 qualified1 100% avalanche t
stb36nm60n.pdf

STB36NM60NAutomotive-grade N-channel 600 V, 0.093 , 29 A, MDmesh II Power MOSFET in a DPAK packageDatasheet production dataFeatures VDS @RDS(on) Order code ID PTOTTABTJmax max.STB36NM60N 650 V 0.105 29 A 210 W Designed for automotive applications and 3AEC-Q101 qualified1 100% avalanche tested2D PAK Low input capacitance and gate charge
Datasheet: STB30NF10 , STB30NF20 , STB30NM50N , STB30NM60ND , STB32N65M5 , STB34NM60ND , STB35N65M5 , STB35NF10 , IRFZ44N , STB36NM60N , STB3N62K3 , STB3NK60Z , STB40NF10 , STB40NF10L , STB40NF20 , STB40NS15 , STB42N65M5 .
Keywords - STB36NF06L MOSFET datasheet
STB36NF06L cross reference
STB36NF06L equivalent finder
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History: HFP630 | SSI4N80A



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