All MOSFET. STB40NF10 Datasheet

 

STB40NF10 Datasheet and Replacement


   Type Designator: STB40NF10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: D2PAK
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STB40NF10 Datasheet (PDF)

 ..1. Size:414K  st
 stb40nf10.pdf pdf_icon

STB40NF10

STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V

 0.1. Size:400K  st
 stb40nf10l.pdf pdf_icon

STB40NF10

STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V

 0.2. Size:403K  st
 stb40nf10t4.pdf pdf_icon

STB40NF10

STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V

 0.3. Size:393K  st
 stb40nf10lt4.pdf pdf_icon

STB40NF10

STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V

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History: TK2P60D | IRFBG20

Keywords - STB40NF10 MOSFET datasheet

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