STB42N65M5 Specs and Replacement

Type Designator: STB42N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm

Package: D2PAK

STB42N65M5 substitution

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STB42N65M5 datasheet

 ..1. Size:1097K  st
 stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf pdf_icon

STB42N65M5

STx42N65M5 N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 1 STB42N65M5 710 V ... See More ⇒

 9.1. Size:187K  samhop
 stb423s stp423s.pdf pdf_icon

STB42N65M5

Green Product S T B / P 4 2 3 S S amHop Microelectronics C orp. Feb.26,2007 P-Channel Logic Level Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S 4 R DS (ON) ( m ) Max VDS S ID S uper high dense cell design for extremely low R DS (ON) . 9.5 @ VG S = -10V High power and current handling capability. - 40V - 65A TO-220 & TO-263 package. 12.5 @ VG S ... See More ⇒

Detailed specifications: STB36NF06L, STB36NM60N, STB3N62K3, STB3NK60Z, STB40NF10, STB40NF10L, STB40NF20, STB40NS15, IRFP460, STB45NF06, STB4N62K3, STB4NK60Z, STB4NK60Z-1, STB50N25M5, STB50NF25, STB55NF03L, STB55NF06

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.