All MOSFET. STB42N65M5 Datasheet

 

STB42N65M5 Datasheet and Replacement


   Type Designator: STB42N65M5
   Marking Code: 42N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: D2PAK
 

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STB42N65M5 Datasheet (PDF)

 ..1. Size:1097K  st
 stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf pdf_icon

STB42N65M5

STx42N65M5N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFETin I2PAK, TO-220, TO-220FP, D2PAK and TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max3 3321STB42N65M5 710 V

 9.1. Size:187K  samhop
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STB42N65M5

GreenProductS T B / P 4 2 3 SS amHop Microelectronics C orp. Feb.26,2007P-Channel Logic Level Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR YF E ATUR E S4R DS (ON) ( m ) MaxVDS S IDS uper high dense cell design for extremely low R DS (ON).9.5 @ VG S = -10V High power and current handling capability.- 40V - 65ATO-220 & TO-263 package.12.5 @ VG S

Datasheet: STB36NF06L , STB36NM60N , STB3N62K3 , STB3NK60Z , STB40NF10 , STB40NF10L , STB40NF20 , STB40NS15 , IRF640 , STB45NF06 , STB4N62K3 , STB4NK60Z , STB4NK60Z-1 , STB50N25M5 , STB50NF25 , STB55NF03L , STB55NF06 .

History: IPI70N10S3L-12 | HRP80N08K | RU30L15H | NTP055N65S3H | JMSL0302AU | NCE30PD08S | SIS407ADN

Keywords - STB42N65M5 MOSFET datasheet

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