STB50N25M5 Specs and Replacement

Type Designator: STB50N25M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: D2PAK

STB50N25M5 substitution

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STB50N25M5 datasheet

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 stb50n25m5.pdf pdf_icon

STB50N25M5

STB50N25M5 N-channel 250 V, 0.055 , 28 A, D2PAK MDmesh V Power MOSFET Features RDS(on) Type VDSS ID max STB50N25M5 250 V ... See More ⇒

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 stb50ne08.pdf pdf_icon

STB50N25M5

STB50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STB50NE08 80 V ... See More ⇒

 8.2. Size:443K  st
 stb50ne10.pdf pdf_icon

STB50N25M5

STB50NE10 N-channel 100V - 0.021 - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V ... See More ⇒

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 stb50nf25 stp50nf25.pdf pdf_icon

STB50N25M5

STB50NF25 STP50NF25 N-channel 250V - 0.055 - 45A - D2PAK - TO-220 low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID PW Max STP50NF25 250 V ... See More ⇒

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Detailed specifications: STB40NF10L, STB40NF20, STB40NS15, STB42N65M5, STB45NF06, STB4N62K3, STB4NK60Z, STB4NK60Z-1, IRFB4110, STB50NF25, STB55NF03L, STB55NF06, STB55NF06L, STB5N52K3, STB5N62K3, STB5NK50Z, STB60N55F3

Keywords - STB50N25M5 MOSFET specs

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