All MOSFET. STB50N25M5 Datasheet

 

STB50N25M5 Datasheet and Replacement


   Type Designator: STB50N25M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: D2PAK
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STB50N25M5 Datasheet (PDF)

 ..1. Size:835K  st
 stb50n25m5.pdf pdf_icon

STB50N25M5

STB50N25M5N-channel 250 V, 0.055 , 28 A, D2PAKMDmesh V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTB50N25M5 250 V

 8.1. Size:95K  st
 stb50ne08.pdf pdf_icon

STB50N25M5

STB50NE08N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTB50NE08 80 V

 8.2. Size:443K  st
 stb50ne10.pdf pdf_icon

STB50N25M5

STB50NE10N-channel 100V - 0.021 - 50A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB50NE10 100V

 8.3. Size:345K  st
 stb50nf25 stp50nf25.pdf pdf_icon

STB50N25M5

STB50NF25STP50NF25N-channel 250V - 0.055 - 45A - D2PAK - TO-220low gate charge STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID PWMaxSTP50NF25 250 V

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Keywords - STB50N25M5 MOSFET datasheet

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