All MOSFET. STB60N55F3 Datasheet

 

STB60N55F3 Datasheet and Replacement


   Type Designator: STB60N55F3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: D2PAK
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STB60N55F3 Datasheet (PDF)

 ..1. Size:624K  st
 stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf pdf_icon

STB60N55F3

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

 8.1. Size:51K  st
 stb60ne03l-12.pdf pdf_icon

STB60N55F3

STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V

 8.2. Size:425K  st
 stb60nf06.pdf pdf_icon

STB60N55F3

STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V

 8.3. Size:514K  st
 stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf pdf_icon

STB60N55F3

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

Keywords - STB60N55F3 MOSFET datasheet

 STB60N55F3 cross reference
 STB60N55F3 equivalent finder
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