STB60N55F3
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STB60N55F3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 80
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 50
ns
Cossⓘ - Выходная емкость: 500
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085
Ohm
Тип корпуса:
D2PAK
- подбор MOSFET транзистора по параметрам
STB60N55F3
Datasheet (PDF)
..1. Size:624K st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf 
STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V
8.1. Size:51K st
stb60ne03l-12.pdf 
STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V
8.2. Size:425K st
stb60nf06.pdf 
STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V
8.4. Size:415K st
stb60nf06-1 stb60nf06t4.pdf 
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
8.5. Size:446K st
stb60ne06l-16t4.pdf 
STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V
8.6. Size:514K st
stb60nf06l stp60nf06l stp60nf06lfp.pdf 
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
8.7. Size:568K st
stb60nh02lt4.pdf 
STB60NH02LN-CHANNEL 24V - 0.0085 - 60A DPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTB60NH02L 24 V
8.8. Size:87K st
stb60n03l-10.pdf 
STB60N03L-10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMIRARY DATATYPE V R IDSS DS(on) DSTB60N03L-10 30 V
8.9. Size:419K st
stb60nf06 stb60nf06-1.pdf 
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
8.10. Size:359K st
stb60nf10-1 stb60nf10t4.pdf 
STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V
8.11. Size:580K st
stb60nh02l.pdf 
STB60NH02LN-CHANNEL 24V - 0.0085 - 60A DPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTB60NH02L 24 V
8.12. Size:450K st
stb60ne06l-16.pdf 
STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V
8.13. Size:472K st
stb60nf06l.pdf 
STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 - 60A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06L 60 V
8.14. Size:87K st
stb60n06-14.pdf 
STB60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB60N06-14 60 V
8.15. Size:99K st
stb60ne03l.pdf 
STB60NE03L-10N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(o n) IDSTB60NE03L-10 30 V
8.16. Size:364K st
stb60nf10 stb60nf10-1 stp60nf10.pdf 
STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V
8.17. Size:1410K cn vbsemi
stb60nf06.pdf 
STB60NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc
8.18. Size:867K cn vbsemi
stb60n06-14.pdf 
STB60N06-14www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou
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History: SSG4410N
| ELM14702AA-N
| FDB8444F085
| FDD86581-F085
| RJK6025DPH-E0
| SIR812DP
| IXFP18N65X2
