STB7N52K3
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB7N52K3
Marking Code: 7N52K3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 525
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.98
Ohm
Package:
D2PAK
STB7N52K3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB7N52K3
Datasheet (PDF)
..1. Size:1194K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf 
STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V
..2. Size:1317K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf
STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V
9.2. Size:125K st
stb7na40.pdf
STB7NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB7NA40 400 V
9.3. Size:935K st
stb7nk80z stb7nk80z-1 stp7nk80zfp stp7nk80z.pdf
STB7NK80Z, STB7NK80Z-1STP7NK80ZFP, STP7NK80ZN-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP7NK80Z 800V
9.4. Size:99K st
stb7nb50.pdf
STB7NB60 N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB7NB60 600 V
9.5. Size:61K st
stb7nb40.pdf
STB7NB40N - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB7NB40 400 V
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
