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STD26NF10 Spec and Replacement


   Type Designator: STD26NF10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: DPAK
 

 STD26NF10 substitution

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STD26NF10 Specs

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 std26nf10.pdf pdf_icon

STD26NF10

STD26NF10 N-channel 100V - 0.033 - 25A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS(on) ID STD26NF10 100V ... See More ⇒

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 std26p3llh6.pdf pdf_icon

STD26NF10

STD26P3LLH6 P-channel 30 V, 0.024 typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet - production data Features RDS(on) Order code VDSS max ID PTOT TAB STD26P3LLH6 30 V 0.030 (1) 12 A 40 W 3 2 1. @ VGS= 10 V 1 RDS(on) * Qg industry benchmark DPAK Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate input resis... See More ⇒

Detailed specifications: STD1NK60 , STD1NK80Z , STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 , STD25NF10 , STD25NF10LA , AO4468 , STD27N3LH5 , STD2HNK60Z , STD2HNK60Z-1 , STD2N62K3 , STD2NC45-1 , STD2NK100Z , STD2NK60Z-1 , STD2NK70Z .

Keywords - STD26NF10 MOSFET specs

 STD26NF10 cross reference
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