STD3PK50Z Specs and Replacement
Type Designator: STD3PK50Z
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
STD3PK50Z substitution
- MOSFET ⓘ Cross-Reference Search
STD3PK50Z datasheet
std3pk50z.pdf
STD3PK50Z P-channel 500 V, 3 typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD3PK50Z 500 V 4 2.8 A 70 W Gate charge minimized Extremely high dv/dt capability 100% avalanche tested Very low intrinsic capacitance Improved ESD capability Figure 1... See More ⇒
Detailed specifications: STD3NK60Z, STD3NK60Z-1, STD3NK60ZD, STD3NK80Z, STD3NK80Z-1, STD3NK90Z, STD3NM60, STD3NM60-1, 2SK3878, STD40N2LH5, STD40NF03L, STD40NF10, STD40NF3LL, STD44N4LF6, STD45NF75, STD4N52K3, STD4N62K3
Keywords - STD3PK50Z MOSFET specs
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History: CS8N60ARD | APM2605C | BSR302N | SMK0825FZ | PJM3401PSA | AP4532GM-HF | CS8N80A8H
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