All MOSFET. STD3PK50Z Datasheet

 

STD3PK50Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD3PK50Z
   Marking Code: 3PK50Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: DPAK

 STD3PK50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD3PK50Z Datasheet (PDF)

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 std3pk50z.pdf

STD3PK50Z STD3PK50Z

STD3PK50Z P-channel 500 V, 3 typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD3PK50Z 500 V 4 2.8 A 70 W Gate charge minimized Extremely high dv/dt capability 100% avalanche tested Very low intrinsic capacitance Improved ESD capability Figure 1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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