All MOSFET. STD4NS25 Datasheet

 

STD4NS25 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD4NS25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Drain Current |Id|: 4 A

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: DPAK

STD4NS25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD4NS25 Datasheet (PDF)

0.1. std4ns25.pdf Size:278K _st

STD4NS25
STD4NS25

STD4NS25 N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD4NS25 250 V < 1.1 Ω 4 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DPAK IPAK DESCRIPTION TO-252 TO-251 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has

0.2. std4ns25t4.pdf Size:191K _st

STD4NS25
STD4NS25

STD4NS25 N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD4NS25 250 V < 1.1 Ω 4 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DPAK IPAK DESCRIPTION TO-252 TO-251 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has

 9.1. std4n20.pdf Size:271K _st

STD4NS25
STD4NS25

STD4N20 N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD4N20 200 V < 1.5 Ω 4 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 ADD SUFFIX “T4” FOR OREDERING IN TAPE & 1 1 REEL DPAK IPAK DESCRIPTION TO-252 TO-251 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has d

9.2. stb4n62k3 std4n62k3.pdf Size:1006K _st

STD4NS25
STD4NS25

STB4N62K3 STD4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3™ Power MOSFET DPAK, D²PAK Features Order codes VDSS RDS(on) max ID Pw STB4N62K3 620 V < 2 Ω 3.8 A 70 W STD4N62K3 ■ 100% avalanche tested 3 3 1 1 ■ Extremely high dv/dt capability D²PAK DPAK ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■

 9.3. std4na40.pdf Size:169K _st

STD4NS25
STD4NS25

STD4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD4NA40 400 V < 2 Ω 3.3 A TYPICAL R = 1.7 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-

9.4. std4nk80zt4.pdf Size:543K _st

STD4NS25
STD4NS25

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 2 STP4NK80Z 800 V < 3.5 Ω 3 A 1 STP4NK80ZFP 800 V < 3.5 Ω 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 Ω 3 A STD4NK80Z-1 800 V < 3.5 Ω 3 A ■ Extremely high dv/dt capability 3 3 2

 9.5. std4n25.pdf Size:142K _st

STD4NS25
STD4NS25

STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D STD4N25 250 V < 1.1 Ω 4 A TYPICAL R = 0.7 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252)

9.6. std4nb40.pdf Size:62K _st

STD4NS25
STD4NS25

STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD4NB40 400 V < 1.8 Ω 3.7 A TYPICAL R = 1.47 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 1 GATE CHARGE MINIMIZED 1 DESCRIPTION IPAK DPAK Using the latest high voltage MESH OVERLAY TO-251 TO-252 process, SGS-

9.7. std4nk50zd std4nk50zd-1 stf4nk50zd stp4nk50zd.pdf Size:903K _st

STD4NS25
STD4NS25

STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET General features 3 Type VDSS RDS(on) ID Pw 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W 3 DPAK STD4NK50ZD 500V <2.7Ω 3A 45W 2 1 STF4NK50ZD 500V <2.7Ω 3A 20W TO-220 STP4NK50ZD 500V <2.7Ω 3A 45W ■ 100% avalanche tested 3 3 ■ Extrem

9.8. std4nk50zt4.pdf Size:474K _st

STD4NS25
STD4NS25

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 Ω 3 A 45 W STP4NK50ZFP 500 V < 2.7 Ω 3 A 20 W STD4NK50Z 500 V < 2.7 Ω 3 A 45 W STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 3 TYPICAL RDS(on) = 2.3 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

9.9. stp4nk50z stp4nk50zfp std4nk50z std4nk50z-1.pdf Size:666K _st

STD4NS25
STD4NS25

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 Ω 3 A 45 W STP4NK50ZFP 500 V < 2.7 Ω 3 A 20 W STD4NK50Z 500 V < 2.7 Ω 3 A 45 W STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 3 TYPICAL RDS(on) = 2.3 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

9.10. stb4nk60zx std4nk60zx stp4nk60z stp4nk60zfp.pdf Size:577K _st

STD4NS25
STD4NS25

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V < 2 Ω 70 W 4 A TO-220 DPAK IPAK STB4NK60Z-1 600 V < 2 Ω 70 W 4 A STD4NK60Z 600 V < 2 Ω 70 W 4 A STD4NK60Z-1 600 V < 2 Ω 70 W

9.11. stb4nk60zt4 std4nk60zt4.pdf Size:965K _st

STD4NS25
STD4NS25

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V < 2 Ω 70 W 4 A TO-220 DPAK IPAK STB4NK60Z-1 600 V < 2 Ω 70 W 4 A STD4NK60Z 600 V < 2 Ω 70 W 4 A STD4NK60Z-1 600 V < 2 Ω 70 W 4 A

9.12. std4n52k3 stf4n52k3 stp4n52k3 stu4n52k3.pdf Size:932K _st

STD4NS25
STD4NS25

STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ω, IPAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Order codes VDSS ID Pw max 3 3 2 1 1 STD4N52K3 2.5 A 45 W DPAK IPAK STF4N52K3 2.5 A 20 W 525 V < 2.6 Ω STP4N52K3 2.5 A (1) 45 W STU4N52K3 2.5 A 45 W 1. Limited by package 3 ■ 100% avalanche tested 3 2 2 1 1 ■ Extremely

9.13. stp4nk80z stp4nk80zfp std4nk80z std4nk80z-1.pdf Size:550K _st

STD4NS25
STD4NS25

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 2 STP4NK80Z 800 V < 3.5 Ω 3 A 1 STP4NK80ZFP 800 V < 3.5 Ω 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 Ω 3 A STD4NK80Z-1 800 V < 3.5 Ω 3 A ■ Extremely high dv/dt capability 3 3 2

9.14. std4nb25.pdf Size:90K _st

STD4NS25
STD4NS25

STD4NB25  N - CHANNEL 250V - 0.95Ω - 4A - DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD4NB25 250 V < 1.1Ω 4 A TYPICAL R =0.95 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE 1 DESCRIPTION Using the latest high voltage MESH OVERLAY DPAK  pr

9.15. std4nk100z.pdf Size:610K _st

STD4NS25
STD4NS25

STD4NK100Z N-channel 1000 V, 5.6 Ω, 2.2 A SuperMESH™ Power MOSFET Zener-protected in DPAK package Datasheet — preliminary data Features Order code VDSS RDS(on)max ID STD4NK100Z 1000 V < 6.8 Ω 2.2 A TAB ■ Extremely high dv/dt capability 2 3 ■ 100% avalanche tested 1 ■ Gate charge minimized DPAK ■ Very low intrinsic capacitance ■ Very good manufacturing repeatabili

9.16. std4n80k5 stf4n80k5 stp4n80k5 stu4n80k5.pdf Size:1294K _st

STD4NS25
STD4NS25

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT 3 1 STD4N80K5 60 W 3 DPAK 2 STF4N80K5 20 W 1 800 V 2.5 Ω 3 A TO-220FP TAB STP4N80K5 60 W TAB STU4N80K5 • Industry’s lowest RDS(on) x area 3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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