STD4NS25 - аналоги, параметры транзистора - Справочник транзисторов

STD4NS25. Аналоги и основные параметры

Наименование производителя: STD4NS25

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 64 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm

Тип корпуса: DPAK

Аналог (замена) для STD4NS25

- подборⓘ MOSFET транзистора по параметрам

STD4NS25 даташит

..1. Size:278K st
std4ns25.pdf pdf_icon

STD4NS25 N-CHANNEL 250V - 0.9 - 4A DPAK/IPAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STD4NS25 250 V

0.1. Size:191K st
std4ns25t4.pdf pdf_icon

STD4NS25 N-CHANNEL 250V - 0.9 - 4A DPAK/IPAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STD4NS25 250 V

9.1. Size:169K 1
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STD4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD4NA40 400 V

9.2. Size:142K 1
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STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D STD4N25 250 V

9.3. Size:610K st
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STD4NK100Z N-channel 1000 V, 5.6 , 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK package Datasheet preliminary data Features Order code VDSS RDS(on)max ID STD4NK100Z 1000 V

9.4. Size:726K st
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9.5. Size:577K st
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STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V

9.6. Size:90K st
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STD4NB25 N - CHANNEL 250V - 0.95 - 4A - DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD4NB25 250 V

9.7. Size:585K st
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9.9. Size:271K st
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STD4N20 N-CHANNEL 200V - 1.2 - 4A DPAK/IPAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STD4N20 200 V

9.10. Size:474K st
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9.11. Size:666K st
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9.12. Size:543K st
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9.13. Size:62K st
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STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD4NB40 400 V

9.14. Size:550K st
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9.16. Size:807K st
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9.17. Size:965K st
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STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V, 1.76 , 4 A SuperMESH Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V

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