STD5NM60 Datasheet and Replacement

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

STP8NM60, STP8NM60FPSTD5NM60, STD5NM60-1N-CHANNEL 600V - 0.9 - 8A TO-220/TO-220FP/DPAK/IPAKMDmesh Power MOSFETTYPE VDSS RDS(on) ID PwSTP8NM60 600 V

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

isc N-Channel MOSFET Transistor STD5NM50T4FEATURESStatic drain-source on-resistance:RDS(on)0.8100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 V