STD65N55F3 MOSFET Datasheet: N-Ch, 55V, 80A. Full specification with pinout and replacement list

STD65N55F3 Specs and Replacement

Type Designator: STD65N55F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DPAK

STD65N55F3 substitution

- MOSFET ⓘ Cross-Reference Search

STD65N55F3 datasheet

..1. Size:441K st
std65n55f3.pdf pdf_icon

STD65N55F3 N-channel 55V - 6.5m - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STD65N55F3 55V ... See More ⇒

..2. Size:799K cn vbsemi
std65n55f3.pdf pdf_icon

... See More ⇒

6.1. Size:800K st
std65n55lf3.pdf pdf_icon

STD65N55LF3 N-channel 55 V, 7.0 m , 80 A DPAK STripFET III Power MOSFET Features RDS(on) Order code VDSS ID Pw max. STD65N55LF3 55 V ... See More ⇒

8.1. Size:791K st
std65n3llh5 stu65n3llh5.pdf pdf_icon

STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 , 65 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A 3 RDS(on) * Qg industry benchmark 3 2 1 1 Extremely low on-resistance RDS(on) Very low switching gate charge DPAK IPAK High avalanche ruggedness Low gate drive pow... See More ⇒