STD65N55LF3 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD65N55LF3
Marking Code: 65N55LF3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DPAK
STD65N55LF3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD65N55LF3 Datasheet (PDF)
std65n55lf3.pdf
STD65N55LF3N-channel 55 V, 7.0 m, 80 A DPAKSTripFET III Power MOSFETFeaturesRDS(on) Order code VDSS ID Pwmax.STD65N55LF3 55 V
std65n55f3.pdf
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std65n55f3.pdf
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STD65NF06STP65NF06N-channel 60V - 11.5m - 60A - DPAK/TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD65NF06 60V
std65nf06.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STD65NF06FEATURESWith TO-252( DPAK ) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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