STD9NM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STD9NM60N
Marking Code: 9NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.4 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.745 Ohm
Package: DPAK
STD9NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD9NM60N Datasheet (PDF)
std9nm60n stf9nm60n stp9nm60n.pdf
STD9NM60NSTF9NM60N, STP9NM60NN-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.33221STD9NM60N1TO-220FP TO-220STF9NM60N 650 V
std9nm50n.pdf
STD9NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAKFeaturesOrder code VDSS@TJMAX RDS(on)max. IDSTD9NM50N 550 V
std9nm50n std9nm50n-1 stp9nm50n stf9nm50n.pdf
STD9NM50N - STD9NM50N-1STF9NM50N - STP9NM50NN-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)323STD9NM50N 550V
std9nm40n.pdf
STD9NM40N, STP9NM40NN-channel 400 V, 0.73 typ., 5.6 A MDmesh II Power MOSFET in DPAK and TO-220 packagesDatasheet production dataFeaturesOrder codes VDSS@TJMAX RDS(on)max. IDSTD9NM40NTAB450 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918