All MOSFET. STE40NC60 Datasheet

 

STE40NC60 Datasheet and Replacement


   Type Designator: STE40NC60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 1190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: ISOTOP
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STE40NC60 Datasheet (PDF)

 ..1. Size:273K  st
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STE40NC60

STE40NC60N-CHANNEL 600V - 0.098 - 40A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE40NC60 600V

 8.1. Size:48K  1
 ste40na60.pdf pdf_icon

STE40NC60

STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V

 8.2. Size:311K  st
 ste40nk90zd.pdf pdf_icon

STE40NC60

STE40NK90ZDN-channel 900V - 0.14 - 40A ISOTOPSuper FREDmesh MOSFETGeneral featuresType VDSS RDS(on) ID PwSTE40NK90ZD 900V

 8.3. Size:97K  st
 ste40na60.pdf pdf_icon

STE40NC60

STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V

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Keywords - STE40NC60 MOSFET datasheet

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