STE53NC50 Datasheet and Replacement
Type Designator: STE53NC50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: ISOTOP
STE53NC50 substitution
STE53NC50 Datasheet (PDF)
ste53nc50.pdf
STE53NC50N-CHANNEL 500V - 0.070 - 53A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE53NC50 500V
ste53na50.pdf
STE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTE53NA50 500 V
Datasheet: STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , IRF640N , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N , STF10NM60ND .
History: PM550BA | BLP04N10-B | RQA0008NXAQS | AM2394NE | PHB110NQ08T | S-LNTK2575LT1G | IXFH18N60P
Keywords - STE53NC50 MOSFET datasheet
STE53NC50 cross reference
STE53NC50 equivalent finder
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History: PM550BA | BLP04N10-B | RQA0008NXAQS | AM2394NE | PHB110NQ08T | S-LNTK2575LT1G | IXFH18N60P
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