All MOSFET. STE53NC50 Datasheet

 

STE53NC50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STE53NC50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: ISOTOP

 STE53NC50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE53NC50 Datasheet (PDF)

 ..1. Size:278K  st
 ste53nc50.pdf

STE53NC50 STE53NC50

STE53NC50N-CHANNEL 500V - 0.070 - 53A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE53NC50 500V

 8.1. Size:280K  st
 ste53na50.pdf

STE53NC50 STE53NC50

STE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTE53NA50 500 V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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