All MOSFET. STE53NC50 Datasheet

 

STE53NC50 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE53NC50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 310 nC

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: ISOTOP

STE53NC50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE53NC50 Datasheet (PDF)

0.1. ste53nc50.pdf Size:278K _st

STE53NC50 STE53NC50

STE53NC50 N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08Ω 53 A TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements in

8.1. ste53na50.pdf Size:280K _st

STE53NC50 STE53NC50

STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V < 0.085 Ω 53 A TYPICAL R = 0.075 Ω DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ISOTOP VERY LOW INTERN

 

Datasheet: STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , IRF530 , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N , STF10NM60ND .

 

 
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