STE53NC50 Datasheet. Specs and Replacement

Type Designator: STE53NC50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: ISOTOP

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STE53NC50 datasheet

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STE53NC50

STE53NC50 N-CHANNEL 500V - 0.070 - 53A ISOTOP PowerMesh II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V ... See More ⇒

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STE53NC50

STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V ... See More ⇒

Detailed specifications: STD9NM50N, STD9NM60N, STE140NF20D, STE250NS10, STE30NK90Z, STE40NC60, STE40NK90ZD, STE48NM50, 2N7002, STE70NM50, STE70NM60, STF10N62K3, STF10N65K3, STF10NK50Z, STF10NM50N, STF10NM60N, STF10NM60ND

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs