STE70NM50 Spec and Replacement
Type Designator: STE70NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 980 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: ISOTOP
STE70NM50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE70NM50 Specs
ste70nm50.pdf
STE70NM50 N-CHANNEL 500V - 0.045 - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STE70NM50 500V ... See More ⇒
ste70nm60.pdf
STE70NM60 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STE70NM60 600V ... See More ⇒
Detailed specifications: STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , IRF640N , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N , STF10NM60ND , STF10NM65N .
Keywords - STE70NM50 MOSFET specs
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