All MOSFET. STE70NM50 Datasheet

 

STE70NM50 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE70NM50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 600 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 190 nC

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: ISOTOP

STE70NM50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE70NM50 Datasheet (PDF)

0.1. ste70nm50.pdf Size:290K _st

STE70NM50
STE70NM50

STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STE70NM50 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE ISOTOP TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDm

7.1. ste70nm60.pdf Size:315K _st

STE70NM50
STE70NM50

STE70NM60 N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STE70NM60 600V < 0.055Ω 70 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL ISOTOP INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDme

 

Datasheet: STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , IRF1404 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N , STF10NM60ND , STF10NM65N .

 

 
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