STF18N55M5 Datasheet and Replacement
Type Designator: STF18N55M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO220FP
STF18N55M5 substitution
STF18N55M5 Datasheet (PDF)
stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf

STB18N55M5, STD18N55M5STF18N55M5, STP18N55M5N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFETin DPAK, DPAK, TO-220FP and TO-220FeaturesVDSS RDS(on) Order codes ID3@TJmax max131STB18N55M5DPAKDPAKSTD18N55M5550 V
stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf

STB18NM80, STF18NM80STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max33 22 1STB18NM80 800 V
stf18n65m2.pdf

STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF
stf18n60m2.pdf

STF18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protected
Datasheet: STF14NM50N , STF15NM60ND , STF15NM65N , STF16N50U , STF16N65M5 , STF16NF25 , STF17N62K3 , STF17NF25 , 4N60 , STF18NM60N , STF18NM80 , STF19NF20 , STF19NM50N , STF20N95K5 , STF20NF06L , STF20NF20 , STF20NK50Z .
Keywords - STF18N55M5 MOSFET datasheet
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