STF32N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STF32N65M5
Marking Code: 32N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
Package: TO220FP
STF32N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF32N65M5 Datasheet (PDF)
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf
STB32N65M5, STF32N65M5, STI32N65M5STP32N65M5, STW32N65M5N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS@ Type RDS(on) max IDTJmax 33123 12STB32N65M5 710 V
stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf
STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TIS75 | SSM9567GM
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918