APT10M25BVR Datasheet. Specs and Replacement
Type Designator: APT10M25BVR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 1600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO247
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APT10M25BVR substitution
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APT10M25BVR datasheet
apt10m25bvr.pdf
APT10M25BVR 100V 75A 0.025 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒
apt10m25bvr.pdf
isc N-Channel MOSFET Transistor APT10M25BVR FEATURES Drain Current I =75A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.025 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
apt10m25bvfr.pdf
APT10M25BVFR 100V 75A 0.025 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒
apt10m25svr.pdf
APT10M25SVR 100V 75A 0.025 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒
Detailed specifications: APT10M07JVR, APT10M11B2VR, APT10M11JVR, APT10M11LVR, APT10M19BVFR, APT10M19BVR, APT10M19SVR, APT10M25BVFR, 60N06, APT10M25SVR, APT1201R5BVR, APT1201R6BVR, APT12040JVR, APT12080JVR, APT12080LVR, APT20M11JVFR, APT20M11JVR
Keywords - APT10M25BVR MOSFET specs
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