APT1201R6BVR Datasheet. Specs and Replacement

Type Designator: APT1201R6BVR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO247

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APT1201R6BVR datasheet

 ..1. Size:62K  apt
 apt1201r6bvr.pdf pdf_icon

APT1201R6BVR

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 3.1. Size:113K  apt
 apt1201r6bvfr.pdf pdf_icon

APT1201R6BVR

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 3.2. Size:114K  apt
 apt1201r6bvfrg apt1201r6svfrg.pdf pdf_icon

APT1201R6BVR

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 5.1. Size:62K  apt
 apt1201r6.pdf pdf_icon

APT1201R6BVR

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

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Detailed specifications: APT10M11LVR, APT10M19BVFR, APT10M19BVR, APT10M19SVR, APT10M25BVFR, APT10M25BVR, APT10M25SVR, APT1201R5BVR, IRL3713, APT12040JVR, APT12080JVR, APT12080LVR, APT20M11JVFR, APT20M11JVR, APT20M13PVR, APT20M19JVR, APT20M22B2VFR

Keywords - APT1201R6BVR MOSFET specs

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