APT1201R6BVR MOSFET. Datasheet pdf. Equivalent

   Type Designator: APT1201R6BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 155 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO247

APT1201R6BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS