STH250N55F3-6 PDF and Equivalents Search

 

STH250N55F3-6 Specs and Replacement

Type Designator: STH250N55F3-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: H2PAK6

STH250N55F3-6 substitution

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STH250N55F3-6 datasheet

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STH250N55F3-6

STH250N55F3-6 N-channel 55 V, 2.2 m , 180 A, H PAK STripFET III Power MOSFET Features RDS(on) Order code VDSS ID Pw max. STH250N55F3-6 55 V 2.6 m 180 A(1) 300 W 1. Value limited by package Ultra low on-resistance 100% avalanche tested H2PAK-6l Application Switching applications Description Figure 1. Internal schematic diagram This N-channel STripFET III Power ... See More ⇒

Detailed specifications: STFI20NK50Z, STFW12N120K5, STFW3N150, STFW4N150, STFW60N65M5, STFW6N120K3, STH180N10F3-2, STH210N75F6-2, AON6414A, STH260N6F6-2, STH270N4F3-6, STH300NH02L-6, STH85N15F4-2, STH90N15F4-2, STI10N62K3, STI12N65M5, STI13NM60N

Keywords - STH250N55F3-6 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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