All MOSFET. STH250N55F3-6 Datasheet

 

STH250N55F3-6 Datasheet and Replacement


   Type Designator: STH250N55F3-6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: H2PAK6
 

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STH250N55F3-6 Datasheet (PDF)

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STH250N55F3-6

STH250N55F3-6N-channel 55 V, 2.2 m, 180 A, HPAKSTripFET III Power MOSFETFeaturesRDS(on) Order code VDSS ID Pwmax.STH250N55F3-6 55 V 2.6 m 180 A(1) 300 W1. Value limited by package Ultra low on-resistance 100% avalanche testedH2PAK-6lApplicationSwitching applicationsDescriptionFigure 1. Internal schematic diagramThis N-channel STripFET III Power

Datasheet: STFI20NK50Z , STFW12N120K5 , STFW3N150 , STFW4N150 , STFW60N65M5 , STFW6N120K3 , STH180N10F3-2 , STH210N75F6-2 , IRFB4110 , STH260N6F6-2 , STH270N4F3-6 , STH300NH02L-6 , STH85N15F4-2 , STH90N15F4-2 , STI10N62K3 , STI12N65M5 , STI13NM60N .

History: SSF90R900S2

Keywords - STH250N55F3-6 MOSFET datasheet

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