STI200N6F3 Datasheet and Replacement
Type Designator: STI200N6F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1295 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: I2PAK
STI200N6F3 substitution
STI200N6F3 Datasheet (PDF)
stb200n6f3 sti200n6f3 stp200n6f3.pdf

STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32
Datasheet: STH300NH02L-6 , STH85N15F4-2 , STH90N15F4-2 , STI10N62K3 , STI12N65M5 , STI13NM60N , STI16N65M5 , STI18NM60N , 12N60 , STI21N65M5 , STI22NM60N , STI23NM60ND , STI24NM60N , STI24NM65N , STI26NM60N , STI270N4F3 , STI300N4F6 .
History: NCE3N170PF | NTTFS4C10N | NP60N04MUG | IRFB7446PBF | SNN4010D | STI60N55F3 | HSBA3058
Keywords - STI200N6F3 MOSFET datasheet
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History: NCE3N170PF | NTTFS4C10N | NP60N04MUG | IRFB7446PBF | SNN4010D | STI60N55F3 | HSBA3058



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