STI22NM60N Datasheet. Specs and Replacement

Type Designator: STI22NM60N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: I2PAK

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STI22NM60N substitution

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STI22NM60N datasheet

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STI22NM60N

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Detailed specifications: STH90N15F4-2, STI10N62K3, STI12N65M5, STI13NM60N, STI16N65M5, STI18NM60N, STI200N6F3, STI21N65M5, IRF1010E, STI23NM60ND, STI24NM60N, STI24NM65N, STI26NM60N, STI270N4F3, STI300N4F6, STI30N65M5, STI32N65M5

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