STI22NM60N Datasheet and Replacement
Type Designator: STI22NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 84 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: I2PAK
STI22NM60N substitution
STI22NM60N Datasheet (PDF)
stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf

STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V
Datasheet: STH90N15F4-2 , STI10N62K3 , STI12N65M5 , STI13NM60N , STI16N65M5 , STI18NM60N , STI200N6F3 , STI21N65M5 , IRF1010E , STI23NM60ND , STI24NM60N , STI24NM65N , STI26NM60N , STI270N4F3 , STI300N4F6 , STI30N65M5 , STI32N65M5 .
Keywords - STI22NM60N MOSFET datasheet
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