STI26NM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STI26NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: I2PAK
STI26NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STI26NM60N Datasheet (PDF)
sti26nm60n.pdf
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