All MOSFET. STI26NM60N Datasheet

 

STI26NM60N Datasheet and Replacement


   Type Designator: STI26NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: I2PAK
 

 STI26NM60N substitution

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STI26NM60N Datasheet (PDF)

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STI26NM60N

STI26NM60NN-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in a I2PAK packageDatasheet - obsolete productFeatures Order code VDS RDS(on) max IDTABSTI26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge32 Low gate input resistance12I PAKApplications Switching applicationsDescriptionFigure 1. Inter

 9.1. Size:703K  st
sti260n6f6 stp260n6f6.pdf pdf_icon

STI26NM60N

STI260N6F6STP260N6F6N-channel 60 V, 0.0024 , 120 A TO-220, IPAKSTripFET VI DeepGATE Power MOSFETFeaturesOrder codes VDSS RDS(on) max IDSTP260N6F660 V

 9.2. Size:750K  st
sti260n6f6 stp260n6f6.pdf pdf_icon

STI26NM60N

STI260N6F6STP260N6F6N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATEPower MOSFET in TO-220 and IPAK packagesFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI260N6F660 V

Datasheet: STI16N65M5 , STI18NM60N , STI200N6F3 , STI21N65M5 , STI22NM60N , STI23NM60ND , STI24NM60N , STI24NM65N , SPP20N60C3 , STI270N4F3 , STI300N4F6 , STI30N65M5 , STI32N65M5 , STI35N65M5 , STI42N65M5 , STI4N62K3 , STI55NF03L .

History: SSP80R240S2 | RU30C8H | SRT10N047HC56TR-G | WSD14N10DNG | SSF60R190S2 | KNB2708A | SFL3200

Keywords - STI26NM60N MOSFET datasheet

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