STL150N3LLH5 Specs and Replacement

Type Designator: STL150N3LLH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 21.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.8 nS

Cossⓘ - Output Capacitance: 1147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm

Package: POWERFLAT5X6

STL150N3LLH5 substitution

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STL150N3LLH5 datasheet

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STL150N3LLH5

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STL150N3LLH5

STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V... See More ⇒

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STL150N3LLH5

STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V... See More ⇒

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STL150N3LLH5

STL15DN4F5 Dual N-channel 40 V, 8 m , 15 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT (5x6) Low gate drive power losses Double ... See More ⇒

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Detailed specifications: STI8N65M5, STL100N1VH5, STL100N6LF6, STL10N3LLH5, STL11N3LLH6, STL12N65M5, STL13NM60N, STL140N4LLF5, TK10A60D, STL150N3LLH6, STL15DN4F5, STL15N3LLH5, STL160N3LLH6, STL16N1VH5, STL16N65M5, STL17N3LLH6, STL18N55M5

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