All MOSFET. STL150N3LLH5 Datasheet

 

STL150N3LLH5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL150N3LLH5
   Marking Code: 150N3LLH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 21.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 30.8 nS
   Cossⓘ - Output Capacitance: 1147 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm
   Package: POWERFLAT6X5

 STL150N3LLH5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL150N3LLH5 Datasheet (PDF)

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stl150n3llh5.pdf

STL150N3LLH5
STL150N3LLH5

STL150N3LLH5N-channel 30 V, 0.0014 , 35 A, PowerFLAT (6x5)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH5 30 V

 3.1. Size:829K  st
stl150n3llh6.pdf

STL150N3LLH5
STL150N3LLH5

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V

 3.2. Size:835K  onsemi
stl150n3llh6.pdf

STL150N3LLH5
STL150N3LLH5

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V

 9.1. Size:775K  st
stl15dn4f5.pdf

STL150N3LLH5
STL150N3LLH5

STL15DN4F5Dual N-channel 40 V, 8 m, 15 APowerFLAT(5x6) double island, STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STL15DN4F5 40 V 9 m 15 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargePowerFLAT (5x6) Low gate drive power lossesDouble

 9.2. Size:141K  st
2stl1525.pdf

STL150N3LLH5
STL150N3LLH5

2STL1525Low voltage high performance NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speedApplications Emergency lighting LED driveTO-92MODTO-92MOD-AP Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulationFigure 1. Internal schematic diagra

 9.3. Size:1411K  st
stl15n65m5.pdf

STL150N3LLH5
STL150N3LLH5

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V

 9.4. Size:849K  st
stl15n3llh5.pdf

STL150N3LLH5
STL150N3LLH5

STL15N3LLH5N-channel 30 V, 0.0045 , 15 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL15N3LLH5 30 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSP4N70A | SWHA106R95VS

 

 
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