Справочник MOSFET. STL150N3LLH5

 

STL150N3LLH5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STL150N3LLH5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 22 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30.8 ns
   Cossⓘ - Выходная емкость: 1147 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00175 Ohm
   Тип корпуса: POWERFLAT6X5

 Аналог (замена) для STL150N3LLH5

 

 

STL150N3LLH5 Datasheet (PDF)

 ..1. Size:522K  st
 stl150n3llh5.pdf

STL150N3LLH5 STL150N3LLH5

STL150N3LLH5N-channel 30 V, 0.0014 , 35 A, PowerFLAT (6x5)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH5 30 V

 3.1. Size:829K  st
 stl150n3llh6.pdf

STL150N3LLH5 STL150N3LLH5

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V

 3.2. Size:835K  onsemi
 stl150n3llh6.pdf

STL150N3LLH5 STL150N3LLH5

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V

 9.1. Size:775K  st
 stl15dn4f5.pdf

STL150N3LLH5 STL150N3LLH5

STL15DN4F5Dual N-channel 40 V, 8 m, 15 APowerFLAT(5x6) double island, STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STL15DN4F5 40 V 9 m 15 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargePowerFLAT (5x6) Low gate drive power lossesDouble

 9.2. Size:141K  st
 2stl1525.pdf

STL150N3LLH5 STL150N3LLH5

2STL1525Low voltage high performance NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speedApplications Emergency lighting LED driveTO-92MODTO-92MOD-AP Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulationFigure 1. Internal schematic diagra

 9.3. Size:1411K  st
 stl15n65m5.pdf

STL150N3LLH5 STL150N3LLH5

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V

 9.4. Size:849K  st
 stl15n3llh5.pdf

STL150N3LLH5 STL150N3LLH5

STL15N3LLH5N-channel 30 V, 0.0045 , 15 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL15N3LLH5 30 V

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