STL15DN4F5 Datasheet and Replacement
Type Designator: STL15DN4F5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: POWERFLAT5X6DI
STL15DN4F5 substitution
STL15DN4F5 Datasheet (PDF)
stl15dn4f5.pdf

STL15DN4F5Dual N-channel 40 V, 8 m, 15 APowerFLAT(5x6) double island, STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STL15DN4F5 40 V 9 m 15 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargePowerFLAT (5x6) Low gate drive power lossesDouble
stl150n3llh5.pdf

STL150N3LLH5N-channel 30 V, 0.0014 , 35 A, PowerFLAT (6x5)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH5 30 V
2stl1525.pdf

2STL1525Low voltage high performance NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speedApplications Emergency lighting LED driveTO-92MODTO-92MOD-AP Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulationFigure 1. Internal schematic diagra
stl15n65m5.pdf

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V
Datasheet: STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 , STL150N3LLH5 , STL150N3LLH6 , 18N50 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 , STL18NM60N , STL21N65M5 .
History: STT3810N | APM4927K | VN67AK | BUZ231 | G08N03D2 | TPC8104 | IPI60R190C6
Keywords - STL15DN4F5 MOSFET datasheet
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History: STT3810N | APM4927K | VN67AK | BUZ231 | G08N03D2 | TPC8104 | IPI60R190C6



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