STL21N65M5 Specs and Replacement
Type Designator: STL21N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: POWERFLAT8X8HV
STL21N65M5 substitution
- MOSFET ⓘ Cross-Reference Search
STL21N65M5 datasheet
stl21n65m5.pdf
STL21N65M5 N-channel 650 V, 0.175 , 17 A PowerFLAT (8x8) HV ultra low gate charge MDmesh V power MOSFET Features VDSS @ RDS(on) Type ID S(3) Bottom iew TJmax max S(3) S(3) G(1) STL21N65M5 710 V ... See More ⇒
Detailed specifications: STL15DN4F5, STL15N3LLH5, STL160N3LLH6, STL16N1VH5, STL16N65M5, STL17N3LLH6, STL18N55M5, STL18NM60N, SI2302, STL23N85K5, STL23NM60ND, STL24NM60N, STL25N15F3, STL25N15F4, STL26NM60N, STL32N55M5, STL35N15F3
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