STL21N65M5 Datasheet and Replacement
Type Designator: STL21N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: POWERFLAT8X8HV
STL21N65M5 substitution
STL21N65M5 Datasheet (PDF)
stl21n65m5.pdf

STL21N65M5N-channel 650 V, 0.175 , 17 A PowerFLAT (8x8) HVultra low gate charge MDmesh V power MOSFETFeaturesVDSS @ RDS(on) Type IDS(3) Bottom iewTJmax maxS(3)S(3)G(1)STL21N65M5 710 V
Datasheet: STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 , STL18NM60N , IRFZ46N , STL23N85K5 , STL23NM60ND , STL24NM60N , STL25N15F3 , STL25N15F4 , STL26NM60N , STL32N55M5 , STL35N15F3 .
History: FDFMA2P853T | AOT2606L
Keywords - STL21N65M5 MOSFET datasheet
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History: FDFMA2P853T | AOT2606L



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