STL21N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL21N65M5
Marking Code: 21N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: POWERFLAT8X8HV
STL21N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL21N65M5 Datasheet (PDF)
stl21n65m5.pdf
STL21N65M5N-channel 650 V, 0.175 , 17 A PowerFLAT (8x8) HVultra low gate charge MDmesh V power MOSFETFeaturesVDSS @ RDS(on) Type IDS(3) Bottom iewTJmax maxS(3)S(3)G(1)STL21N65M5 710 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMO09N15TS | IRFBC30ASPBF | BFC18
History: WMO09N15TS | IRFBC30ASPBF | BFC18
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918