STL24NM60N Specs and Replacement

Type Designator: STL24NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm

Package: POWERFLAT8X8HV

STL24NM60N substitution

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STL24NM60N datasheet

 ..1. Size:627K  st
 stl24nm60n.pdf pdf_icon

STL24NM60N

STL24NM60N N-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HV MDmesh II Power MOSFET Preliminary data Features VDSS @ RDS(on) Type ID S(3) Bottom view TJmax max S(3) S(3) G(1) STL24NM60N 650 V ... See More ⇒

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 stl24n60m2.pdf pdf_icon

STL24NM60N

STL24N60M2 N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID S(2) Bottom view S(2) S(2) STL24N60M2 650 V 0.21 18 A G(1) D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance PowerFLAT ... See More ⇒

Detailed specifications: STL16N1VH5, STL16N65M5, STL17N3LLH6, STL18N55M5, STL18NM60N, STL21N65M5, STL23N85K5, STL23NM60ND, 20N50, STL25N15F3, STL25N15F4, STL26NM60N, STL32N55M5, STL35N15F3, STL40DN3LLH5, STL42N65M5, STL50N3LLH5

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