STL32N55M5 Specs and Replacement
Type Designator: STL32N55M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: POWERFLAT8X8HV
STL32N55M5 substitution
- MOSFET ⓘ Cross-Reference Search
STL32N55M5 datasheet
stl32n55m5.pdf
STL32N55M5 N-channel 550 V, 0.085 , 26 A PowerFLAT (8x8) HV ultra low gate charge MDmesh V Power MOSFET Preliminary data Features VDSS @ RDS(on) Type ID S(3) Bottom view TJmax max S(3) S(3) G(1) STL32N55M5 600 V ... See More ⇒
Detailed specifications: STL18NM60N, STL21N65M5, STL23N85K5, STL23NM60ND, STL24NM60N, STL25N15F3, STL25N15F4, STL26NM60N, IRFZ24N, STL35N15F3, STL40DN3LLH5, STL42N65M5, STL50N3LLH5, STL52N25M5, STL56N3LLH5, STL60N32N3LL, STL60N3LLH5
Keywords - STL32N55M5 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: VN10LE | HUFA76633P3
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