STL52N25M5 Datasheet and Replacement
Type Designator: STL52N25M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: POWERFLAT5X6
STL52N25M5 substitution
STL52N25M5 Datasheet (PDF)
stl52n25m5.pdf
STL52N25M5N-channel 250 V, 0.055 , 28 A, PowerFLAT (5x6)MDmesh V Power MOSFETFeaturesRDS(on) Type VDSS ID(1)max.STL52N25M5 250 V
Datasheet: STL25N15F3 , STL25N15F4 , STL26NM60N , STL32N55M5 , STL35N15F3 , STL40DN3LLH5 , STL42N65M5 , STL50N3LLH5 , RU6888R , STL56N3LLH5 , STL60N32N3LL , STL60N3LLH5 , STL65DN3LLH5 , STL65N3LLH5 , STL70N2LLH5 , STL70N4LLF5 , STL75N3LLZH5 .
History: MSU2N60U | FQP7N20 | IPD65R1K4CFD | EMB12P03G | NTD40N03RG
Keywords - STL52N25M5 MOSFET datasheet
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History: MSU2N60U | FQP7N20 | IPD65R1K4CFD | EMB12P03G | NTD40N03RG
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