STL52N25M5 Specs and Replacement
Type Designator: STL52N25M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: POWERFLAT5X6
STL52N25M5 substitution
- MOSFET ⓘ Cross-Reference Search
STL52N25M5 datasheet
stl52n25m5.pdf
STL52N25M5 N-channel 250 V, 0.055 , 28 A, PowerFLAT (5x6) MDmesh V Power MOSFET Features RDS(on) Type VDSS ID(1) max. STL52N25M5 250 V ... See More ⇒
Detailed specifications: STL25N15F3, STL25N15F4, STL26NM60N, STL32N55M5, STL35N15F3, STL40DN3LLH5, STL42N65M5, STL50N3LLH5, AO3400A, STL56N3LLH5, STL60N32N3LL, STL60N3LLH5, STL65DN3LLH5, STL65N3LLH5, STL70N2LLH5, STL70N4LLF5, STL75N3LLZH5
Keywords - STL52N25M5 MOSFET specs
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