STL80N3LLH6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL80N3LLH6
Marking Code: 80N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min)
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package: POWERFLAT5X6
STL80N3LLH6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL80N3LLH6
Datasheet (PDF)
..1. Size:544K st
stl80n3llh6.pdf
STL80N3LLH6N-channel 30 V, 0.0046 , 21 A PowerFLAT(5x6)STripFET VI DeepGATE Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS IDmaxSTL80N3LLH6 30 V 0.0052 21 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)PowerFLAT ( 5x6 ) High avalanche ruggedness Low gate drive powe
8.1. Size:349K st
stl80n4llf3.pdf
STL80N4LLF3N-channel 40V - 0.0042 - 80A - PowerFLAT (6x5)STripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTL80N4LLF3 40V
8.2. Size:973K st
stl80n75f6.pdf
STL80N75F6N-channel 75 V, 4.5 m typ., 18 A STripFET F6 Power MOSFET in PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL80N75F6 75 V 5.5 m 18 A Very low on-resistance123 Very low gate charge4 High avalanche ruggednessPowerFLAT 5x6 Low gate drive power lossApplications Switching applicationsFi
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