STN3PF06 Specs and Replacement

Type Designator: STN3PF06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: SOT223

STN3PF06 substitution

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STN3PF06 datasheet

 ..1. Size:255K  st
 stn3pf06.pdf pdf_icon

STN3PF06

STN3PF06 P-channel 60 V - 0.20 - 2.5 A - SOT-223 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max 2 STN3PF06 60 V ... See More ⇒

 ..2. Size:778K  cn vbsemi
 stn3pf06.pdf pdf_icon

STN3PF06

STN3PF06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramet... See More ⇒

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 stn3p6f6.pdf pdf_icon

STN3PF06

STN3P6F6 P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDSS RDS(on)max ID 4 STN3P6F6 60 V 0.16 @ 10 V 3 A RDS(on) * Qg industry benchmark 3 2 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SOT-223 Low gate drive power losses Applications Swit... See More ⇒

Detailed specifications: STN1NF10, STN1NK60Z, STN1NK80Z, STN2NF10, STN3N40K3, STN3N45K3, STN3NF06, STN3NF06L, IRF540, STN4NF03L, STN4NF06L, STN4NF20L, STP100NF04, STP10N62K3, STP10NK60Z, STP10NK70Z, STP10NK70ZFP

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