All MOSFET. STN3PF06 Datasheet

 

STN3PF06 Datasheet and Replacement


   Type Designator: STN3PF06
   Marking Code: N3PF06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: SOT223
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STN3PF06 Datasheet (PDF)

 ..1. Size:255K  st
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STN3PF06

STN3PF06P-channel 60 V - 0.20 - 2.5 A - SOT-223STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmax2STN3PF06 60 V

 ..2. Size:778K  cn vbsemi
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STN3PF06

STN3PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet

 9.1. Size:1093K  st
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STN3PF06

STN3P6F6P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 packageDatasheet - production dataFeaturesOrder code VDSS RDS(on)max ID4STN3P6F6 60 V 0.16 @ 10 V 3 A RDS(on) * Qg industry benchmark32 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSOT-223 Low gate drive power lossesApplications Swit

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