All MOSFET. STN4NF20L Datasheet

 

STN4NF20L Datasheet and Replacement


   Type Designator: STN4NF20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT223
 

 STN4NF20L substitution

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STN4NF20L Datasheet (PDF)

 ..1. Size:605K  st
 stn4nf20l.pdf pdf_icon

STN4NF20L

STN4NF20LN-channel 200 V, 1.1 , 1 A SOT-223low gate charge STripFET II Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.2STN4NF20L 200 V

 8.1. Size:280K  st
 stn4nf06l.pdf pdf_icon

STN4NF20L

STN4NF06LN-channel 60 V - 0.07 - 4 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) max IDSTN4NF06L 60 V

 8.2. Size:235K  st
 stn4nf03l.pdf pdf_icon

STN4NF20L

STN4NF03LN-channel 30 V - 0.039 - 6.5 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID2STN4NF03L 30 V

 8.3. Size:810K  cn vbsemi
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STN4NF20L

STN4NF03Lwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PAR

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Datasheet: STN2NF10 , STN3N40K3 , STN3N45K3 , STN3NF06 , STN3NF06L , STN3PF06 , STN4NF03L , STN4NF06L , IRFZ44 , STP100NF04 , STP10N62K3 , STP10NK60Z , STP10NK70Z , STP10NK70ZFP , STP10NK80Z , STP10NK80ZFP , STP10NM50N .

History: IRFSL3107PBF | AON6206

Keywords - STN4NF20L MOSFET datasheet

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