STP20NM60FD Datasheet and Replacement
Type Designator: STP20NM60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220
STP20NM60FD substitution
STP20NM60FD Datasheet (PDF)
stf20nm60d stp20nm60fd stw20nm60fd.pdf

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stp20nm60fp.pdf

isc N-Channel MOSFET Transistor STP20NM60FPFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: STP20N95K5 , STP20NF06 , STP20NF06L , STP20NF20 , STP20NK50Z , STP20NM50 , STP20NM50FD , STP20NM60 , AO3407 , STP20NM60FP , STP20NM65N , STP210N75F6 , STP21N65M5 , STP21N90K5 , STP21NM60ND , STP22NF03L , STP22NM60N .
Keywords - STP20NM60FD MOSFET datasheet
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