STP22NM60N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP22NM60N
Marking Code: 22NM60N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 84
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
TO220
STP22NM60N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP22NM60N
Datasheet (PDF)
..1. Size:818K st
stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf 
STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V
..2. Size:593K st
stb22nm60n stf22nm60n stp22nm60n.pdf
STB22NM60N, STF22NM60N, STP22NM60NDatasheetN-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTABVDS @31 RDS(on)max. IDOrder code2D PAKTjmax.321TO-220FPTAB STB22NM60NSTF22NM60N 650 V 0.22 16 A32 STP22NM60N1TO-220 100% avalanche testedD(2, TAB) Low input capacitance and gate charg
..3. Size:204K inchange semiconductor
stp22nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP22NM60NFEATURESLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
5.1. Size:386K st
stp22nm60.pdf
STP22NM60 - STF22NM60STB22NM60 - STB22NM60-1 - STW22NM60N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247MDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTP22NM60 600 V
7.1. Size:356K st
stp22nm50.pdf
STP22NM50 - STP22NM50FPSTB22NM50 - STB22NM50-1N-CHANNEL 500V - 0.16 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTP22NM50 500 V
8.1. Size:449K st
stp22ns25z.pdf
STP22NS25ZSTB22NS25ZN-CHANNEL 250V - 0.13 - 22A TO-220/D2PAKZener-Protected MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP22NS25Z 250 V
8.2. Size:260K st
stp22ne10l.pdf
STP22NE10LN - CHANNEL 100V - 0.07 - 22A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP22NE10L 100 V
8.3. Size:316K st
stb22ns25z stp22ns25z.pdf
STB22NS25Z - STP22NS25ZN-channel 250V - 0.13 - 22A - TO-220 / D2PAKZener-protected MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB22NS25Z 250V
8.4. Size:75K st
stp22ne03l.pdf
STP22NE03LN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP22NE03L 30 V
8.5. Size:534K st
stp22nf03l.pdf
STP22NF03LN-channel 30 V, 0.0038 , 22 A, TO-220STripFET II Power MOSFETFeaturesType VDSS RDS(on) max IDSTP22NF03L 30 V
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