STP22NM60N Datasheet: MOSFET, N-Ch, 600V, 16A. Full specification with pinout and replacement list

STP22NM60N Datasheet. Specs and Replacement

Type Designator: STP22NM60N 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO220

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STP22NM60N substitution

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STP22NM60N datasheet

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STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in D PAK, TO-220FP and TO-220 packages Features TAB VDS @ 3 1 RDS(on)max. ID Order code 2 D PAK Tjmax. 3 2 1 TO-220FP TAB STB22NM60N STF22NM60N 650 V 0.22 16 A 3 2 STP22NM60N 1 TO-220 100% avalanche tested D(2, TAB) Low input capacitance and gate charg... See More ⇒

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP22NM60N FEATURES Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

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STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STP22NM60 600 V ... See More ⇒