STP22NM60N MOSFET PDF: N-Ch, 600V, 16A. Datasheet. Full specification with pinout and replacement list

STP22NM60N Specs and Replacement

   Type Designator: STP22NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO220

STP22NM60N substitution

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STP22NM60N datasheet

..1. Size:818K st
stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf pdf_icon

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STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in D PAK, TO-220FP and TO-220 packages Features TAB VDS @ 3 1 RDS(on)max. ID Order code 2 D PAK Tjmax. 3 2 1 TO-220FP TAB STB22NM60N STF22NM60N 650 V 0.22 16 A 3 2 STP22NM60N 1 TO-220 100% avalanche tested D(2, TAB) Low input capacitance and gate charg... See More ⇒

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP22NM60N FEATURES Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

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STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STP22NM60 600 V ... See More ⇒