All MOSFET. STP32N55M5 Datasheet

 

STP32N55M5 Datasheet and Replacement


   Type Designator: STP32N55M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
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STP32N55M5 Datasheet (PDF)

 ..1. Size:277K  st
 stp32n55m5 stw32n55m5.pdf pdf_icon

STP32N55M5

STP32N55M5, STW32N55M5N-channel 550 V, 0.074 , 29 A, MDmesh V Power MOSFETin TO-220 and TO-247Preliminary dataFeaturesVDSS RDS(on) Order codes ID@TJmax maxSTP32N55M5550 V

 8.1. Size:201K  st
 stp32n06.pdf pdf_icon

STP32N55M5

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V

 8.2. Size:393K  st
 stp32n06l.pdf pdf_icon

STP32N55M5

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V

 8.3. Size:393K  st
 stp32n05l.pdf pdf_icon

STP32N55M5

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - STP32N55M5 MOSFET datasheet

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