STP32N55M5 Datasheet and Replacement
Type Designator: STP32N55M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220
STP32N55M5 substitution
STP32N55M5 Datasheet (PDF)
stp32n55m5 stw32n55m5.pdf

STP32N55M5, STW32N55M5N-channel 550 V, 0.074 , 29 A, MDmesh V Power MOSFETin TO-220 and TO-247Preliminary dataFeaturesVDSS RDS(on) Order codes ID@TJmax maxSTP32N55M5550 V
stp32n06.pdf

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V
stp32n06l.pdf

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V
stp32n05l.pdf

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V
Datasheet: STP2NK60Z , STP2NK90Z , STP30N65M5 , STP30NF10 , STP30NF20 , STP30NM30N , STP30NM50N , STP30NS15LFP , IRF630 , STP32N65M5 , STP34NM60N , STP34NM60ND , STP35N65M5 , STP35NF10 , STP36NF06 , STP36NF06L , STP3LN62K3 .
History: JCS6N70MP | KMA7D0NP30Q | AP6N3R4CMT | RSJ151P10 | SVG041R4NL5 | IPB039N10N3GE8187 | OSG65R290FF
Keywords - STP32N55M5 MOSFET datasheet
STP32N55M5 cross reference
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History: JCS6N70MP | KMA7D0NP30Q | AP6N3R4CMT | RSJ151P10 | SVG041R4NL5 | IPB039N10N3GE8187 | OSG65R290FF



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