STP32N65M5 Datasheet. Specs and Replacement
Type Designator: STP32N65M5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
Package: TO220
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STP32N65M5 substitution
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STP32N65M5 datasheet
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STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V ... See More ⇒
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Detailed specifications: STP2NK90Z, STP30N65M5, STP30NF10, STP30NF20, STP30NM30N, STP30NM50N, STP30NS15LFP, STP32N55M5, 7N65, STP34NM60N, STP34NM60ND, STP35N65M5, STP35NF10, STP36NF06, STP36NF06L, STP3LN62K3, STP3N150
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