STP42N65M5 Datasheet and Replacement
Type Designator: STP42N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: TO220
STP42N65M5 substitution
STP42N65M5 Datasheet (PDF)
stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf

STx42N65M5N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFETin I2PAK, TO-220, TO-220FP, D2PAK and TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max3 3321STB42N65M5 710 V
stb423s stp423s.pdf

GreenProductS T B / P 4 2 3 SS amHop Microelectronics C orp. Feb.26,2007P-Channel Logic Level Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR YF E ATUR E S4R DS (ON) ( m ) MaxVDS S IDS uper high dense cell design for extremely low R DS (ON).9.5 @ VG S = -10V High power and current handling capability.- 40V - 65ATO-220 & TO-263 package.12.5 @ VG S
Datasheet: STP3NK60ZFP , STP3NK80Z , STP3NK90Z , STP40NF03L , STP40NF10 , STP40NF10L , STP40NF12 , STP40NF20 , 4N60 , STP45NF06 , STP45NF3LL , STP4N150 , STP4N20 , STP4N52K3 , STP4N62K3 , STP4NK50Z , STP4NK50ZD .
History: 2N65KG-TF3-T | RTR020N05FRA | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R
Keywords - STP42N65M5 MOSFET datasheet
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History: 2N65KG-TF3-T | RTR020N05FRA | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R



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