STP52N25M5 Datasheet and Replacement
Type Designator: STP52N25M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO220
STP52N25M5 substitution
STP52N25M5 Datasheet (PDF)
stp52n25m5.pdf
STP52N25M5N-channel 250 V, 0.055 , 28 A, TO-220MDmeshTM V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP52N25M5 250 V
Datasheet: STP4NK50Z , STP4NK50ZD , STP4NK50ZFP , STP4NK60Z , STP4NK60ZFP , STP4NK80Z , STP4NK80ZFP , STP50NF25 , IRFP250 , STP55NF06 , STP55NF06L , STP5N52K3 , STP5N62K3 , STP5N95K3 , STP5NK100Z , STP5NK50Z , STP5NK52ZD .
History: NTP35N15G | SSP65R190S2R | RU2H50R | 2N60L-TF3-T | TJ10S04M3L | IRFR9014 | SSP65R190S
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History: NTP35N15G | SSP65R190S2R | RU2H50R | 2N60L-TF3-T | TJ10S04M3L | IRFR9014 | SSP65R190S
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