STP52N25M5 Specs and Replacement

Type Designator: STP52N25M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO220

STP52N25M5 substitution

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STP52N25M5 datasheet

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STP52N25M5

STP52N25M5 N-channel 250 V, 0.055 , 28 A, TO-220 MDmeshTM V Power MOSFET Features RDS(on) Type VDSS ID max STP52N25M5 250 V ... See More ⇒

Detailed specifications: STP4NK50Z, STP4NK50ZD, STP4NK50ZFP, STP4NK60Z, STP4NK60ZFP, STP4NK80Z, STP4NK80ZFP, STP50NF25, IRFP250, STP55NF06, STP55NF06L, STP5N52K3, STP5N62K3, STP5N95K3, STP5NK100Z, STP5NK50Z, STP5NK52ZD

Keywords - STP52N25M5 MOSFET specs

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