STP80NF10
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP80NF10
Marking Code: P80NF10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 135
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO220
STP80NF10
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP80NF10
Datasheet (PDF)
..1. Size:579K st
stb80nf10 stp80nf10.pdf 
STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V
0.1. Size:232K st
stp80nf10fp.pdf
STP80NF10FPN-channel 100V - 0.012 - 38A - TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID(1)STP80NF10FP 100V
0.2. Size:334K st
stp80nf10-fp.pdf
STP80NF10STP80NF10FPN-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FPLOW GATE CHARGE STripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF10 100 V
6.1. Size:267K st
stp80nf12.pdf
STP80NF12N-channel 120 V, 0.013 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF12 120 V
6.2. Size:261K inchange semiconductor
stp80nf12.pdf
isc N-Channel MOSFET Transistor STP80NF12FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
